Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio
frequency (RF) and microwave power amplifier design, including well-known historical and …

This paper describes a two-stage 5-W broad-band amplifier covering the frequency range
from 10 MHz to 2.4 GHz. An SiC MESFET is used as the power stage. A large-signal table …

We report a high-performance GaN MMIC power amplifier operating from 40MHz to 4,000
MHz. The MMIC achieved 80W pulsed (100us pulse width and 10% duty cycle) output …

In this paper, a 1 MHz to 3.4 GHz, 5 W, highly linear power amplifier based on GaN HEMT is
reported. Load-pull technique has been applied to introduce a compromising solution for the …

In this contribution for the first time the design of a simultaneous dual band high efficiency
harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 …

In this paper, a large signal table-based model for SiC MESFET is presented. A packaged
commercially available high power MESFET device (CREE CRF24010) is adopted for the …

This paper presents a concept to design a compact planar multiharmonic load
transformation network (MHLTN) for the realisation of highly efficient dual-band power …

This paper describes the design, implementation, and measurement results of a 1GHz to 2.5
GHz high harmonic suppression octave power amplifier (PA). The fabricated PA provides …

Several attempts have been made in the last decade for the advancement of field effect
transistors. In this paper, comparative analysis of small signal modeling of FET has been …

SiC MESFETs have an enormous potential for realizing high-power amplifiers at microwave
frequencies due to their wide band-gap features of high breakdown field, high electron …