Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently
gaining momentum in semiconductor processing, because of the increasing need for …

This review provides an overview of area-selective thin film deposition (ASD) with a primary
focus on vapor-phase thin film formation via chemical vapor deposition (CVD) and atomic …

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the
deposition of thin films. However, several physical and chemical phenomena can occur …

Conspectus Atomically precise and highly selective surface reactions are required for
advancing microelectronics fabrication. Advanced atomic processing approaches make use …

Unstable nature against moisture is one of the major issues of metallic halide perovskite
solar cell application. Thin-film encapsulation is known as a powerful approach to notably …

The development of on-purpose 1, 3-butadiene (BDE) technologies remains an active area
in catalysis research, because of the importance of BDE in industrial polymer production …

The surface chemistry of the initial growth during the first or first few precursor cycles in
atomic layer deposition is decisive for how the growth proceeds later on and thus for the …

Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …

The redox properties of titania films grown by ALD on SBA-15, a silica-based mesoporous
material, were characterized as a function of thickness (that is, the number of ALD cycles …