Solid state lighting, including phosphor converted light-emitting diodes (LEDs) and laser
diodes (LDs), have released high demand to develop thermally stable phosphors. For this …

GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display
applications. In these arrays, each μLED works as a single pixel of a whole image. The …

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …

In recent years, the success of laser lighting and display technology depends on the
comprehensive properties of light conversion materials such as thermal stability and …

Newly emerged phosphor ceramics play key roles in high-brightness solid-state laser
lighting technologies. Recently, we developed a translucent CaAlSiN3: Eu2+ red-emitting …

Stranski–Krastanov (SK) growth mode is widely adopted for the self-assembled growth of
semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential …

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

Strain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the
epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical …

In this study, we have demonstrated an N-polar III-nitride tunnel junction (TJ) light-emitting
diode (LED). The LED was grown on an N-polar GaN template on sapphire substrates by …