Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET (DM-DMG-TFET) for label-free biosensing application
This article presented the first-ever 2D analytical model for the surface potential of dual
material gate overlapped-on-drain TFET (DMG-TFET) device for label-free biosensor …
material gate overlapped-on-drain TFET (DMG-TFET) device for label-free biosensor …
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
Abstract A novel Gate All Around Negative Capacitance Junction less FET (GAA-NC-JLFET)
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
is proposed in this work, where different RF/Analog, Linear, and Non-linear parameters were …
Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications
VB Sreenivasulu, V Narendar - International Journal of RF and …, 2021 - Wiley Online Library
Multi‐fin devices are the most reliable option for terahertz (THz) frequency applications at
nano‐regime. In this work impact of spacer engineering on multi‐fin SOI FET performance is …
nano‐regime. In this work impact of spacer engineering on multi‐fin SOI FET performance is …
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET
In this paper, the electrical parameters are evaluated for the variations of temperature in
Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the …
Gate Overlap Ge source Step Shape Double Gate TFET (GO-Ge-SSDG-TFET) under the …
Design and investigation of dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal pocket TFET device as a label-free biosensor
In this article, a dielectric modulated triple metal gate-oxide-stack Z-shaped gate horizontal
source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been …
source pocket tunnel field-effect transistor (DM-TMGOS-ZHP-TFET) structure has been …
Reduction of corner effect in ZG-ES-TFET for improved electrical performance and its reliability analysis in the presence of traps
In this paper, various electrical parameters of a Z-shaped gate elevated source TFET (ZG-ES-
TFET) in the presence of interface traps are investigated. The placement of Z-shaped gate …
TFET) in the presence of interface traps are investigated. The placement of Z-shaped gate …
Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance
In this paper, a novel Dual-Source Elevated-Channel Dopingless TFET (DSEC-DLTFET) is
proposed to enhance the dc and analog/high-frequency (HF) performance of the device …
proposed to enhance the dc and analog/high-frequency (HF) performance of the device …
Physics based analysis of a high-performance dual line tunneling TFET with reduced corner effects
To improve the DC and analog/HF performance, a novel dual line tunneling based TFET
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
(DLT-ES-TFET) with elevated source and L-shaped pocket is proposed in this manuscript. In …
Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications
In this article, an n+ pocket step shape heterodielectric double gate Tunnel TFET (SSHDDG-
TFET) is designed for high frequency and biosensing applications. A calibration of TCAD …
TFET) is designed for high frequency and biosensing applications. A calibration of TCAD …
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
In this article, a Ge‐source is employed in split drain Z‐shaped line TFET structure (SD‐ZHP‐
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …