Vertical and Smooth, etching of InP by Cl2/CH4/Ar Inductively Coupled Plasma at Room Temperature
We study the room-temperature dry etching of InP by inductively coupled plasma (ICP) using
Cl 2/CH 4/Ar mixtures. Etches were characterized in terms of anisotropy and surface …
Cl 2/CH 4/Ar mixtures. Etches were characterized in terms of anisotropy and surface …
Monolithic suspended optical waveguides for InP MEMS
DP Kelly, MW Pruessner, K Amarnath… - IEEE Photonics …, 2004 - ieeexplore.ieee.org
We present a novel waveguide design for InP microelecromechanical systems. The
substrate is removed from underneath the waveguide by sacrificial etching, and the …
substrate is removed from underneath the waveguide by sacrificial etching, and the …
Parametric reactive ion etching of InP using Cl2 and CH4 gases: effects of H2 and Ar addition
JS Yu, YT Lee - Semiconductor science and technology, 2002 - iopscience.iop.org
The etching characteristics of InP by reactive ion etching (RIE) using Cl 2 and CH 4 gases
were investigated systematically as functions of various etching parameters. The etching …
were investigated systematically as functions of various etching parameters. The etching …
Room-temperature inductively coupled plasma etching of InP using Cl2/N2 and Cl2/CH4/H2
L Chee-Wei, C Mee-Koy - Chinese Physics Letters, 2006 - iopscience.iop.org
We optimize the room-temperature etching of InP using Cl 2/CH 4/H 2 and Cl 2/N 2
inductively coupled plasma reactive ions. A design of experiment is used in the optimization …
inductively coupled plasma reactive ions. A design of experiment is used in the optimization …
Study and optimization of room temperature inductively coupled plasma etching of InP using Cl2/CH4/H2 and CH4/H2
CW Lee, D Nie, T Mei, MK Chin - Journal of crystal growth, 2006 - Elsevier
We report an optimized room-temperature etching recipe for Indium Phosphide (InP) based
on the inductively coupled plasma (ICP) reactive-ion etch using Cl2/CH4/H2 gasses. The …
on the inductively coupled plasma (ICP) reactive-ion etch using Cl2/CH4/H2 gasses. The …
Release etching and characterization of MEMS capacitive pressure sensors integrated on a standard 8-metal 130 nm CMOS process
AD Sundararajan, SMR Hasan - Sensors and Actuators A: Physical, 2014 - Elsevier
Monolithic post-processing and characterization of CMOS MEMS capacitive absolute
pressure sensors co-integrated on an 8-metal BEOL (back-end-of-line) 130 nm CMOS …
pressure sensors co-integrated on an 8-metal BEOL (back-end-of-line) 130 nm CMOS …
Inductively coupled CH4/H2 plasma etching process for mesa delineation of InAs/GaSb type‐II superlattice pixels
S Das, U Das - Micro & Nano Letters, 2019 - Wiley Online Library
An inductively coupled plasma etching process for delineation of InAs/GaSb type‐II
superlattice pixels is presented. An optimised etch recipe without alternate plasma cleaning …
superlattice pixels is presented. An optimised etch recipe without alternate plasma cleaning …
High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries
The dry etching characteristics of transparent and conductive indium–zinc oxide (IZO) films
have been investigated using an inductively coupled high-density plasma. While the Cl2 …
have been investigated using an inductively coupled high-density plasma. While the Cl2 …
Reactive ion etching of InP for optoelectronic device applications: comparison in CH4, CH4/H2, and CH4/Ar gas
JS Yu, YT Lee - Journal of the Korean Physical Society, 2000 - khu.elsevierpure.com
The etching characteristics of InP using reactive ion etching in CH 4 gas with/without H 2 (or
Ar) as diluents were compared. Etching parameters, such as the CH 4 flow rate, the H 2 (or …
Ar) as diluents were compared. Etching parameters, such as the CH 4 flow rate, the H 2 (or …
Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films
The dry etching characteristics of bulk, single-crystal zinc-oxide (ZnO) and rf-sputtered
indium–zinc-oxide (IZO) films have been investigated using an inductively coupled high …
indium–zinc-oxide (IZO) films have been investigated using an inductively coupled high …