Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio‐Frequency Molecular Beam Epitaxy
Y Wada, M Deura, Y Kuroda, N Goto… - … status solidi (b), 2023 - Wiley Online Library
ScAlMgO4 (SAM) substrates have attracted considerable attention as platforms for GaN
growth in recent years because GaN can be grown directly on SAM without any buffer layer …
growth in recent years because GaN can be grown directly on SAM without any buffer layer …
Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam …
M Deura, Y Wada, T Fujii, T Araki - physica status solidi (b), 2024 - Wiley Online Library
ScAlMgO4 (SAM) substrates have attracted significant attention as template substrates for
fabricating bulk GaN crystals. Radio‐frequency plasma‐assisted molecular beam epitaxy …
fabricating bulk GaN crystals. Radio‐frequency plasma‐assisted molecular beam epitaxy …
Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy
Y Kubo, M Deura, Y Yamada, T Fujii… - physica status solidi …, 2024 - Wiley Online Library
ScAlMgO4 (SAM) has attracted considerable attention as a substrate for growing InGaN
template layers owing to its lattice matching with In0. 17Ga0. 83N. Furthermore, radio …
template layers owing to its lattice matching with In0. 17Ga0. 83N. Furthermore, radio …
Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic …
H Watanabe, D Wang, T Fujii, T Iwamoto… - … status solidi (b), 2024 - Wiley Online Library
Semiconductor evaluation methods frequently require sample processing and carry the risk
of defects and property changes. Therefore, nondestructive and noncontact electrical …
of defects and property changes. Therefore, nondestructive and noncontact electrical …
Advancements in nitride-semiconductor crystal growth using molecular beam epitaxy
Since 1993, group III–nitride semiconductors, consisting of gallium nitride (GaN), aluminum
nitride (AlN), indium nitride (InN), and their alloys (AlGaN, InGaN, etc.), have been used to …
nitride (AlN), indium nitride (InN), and their alloys (AlGaN, InGaN, etc.), have been used to …
ScAlMgO4 基板上への窒化物半導体のRF-MBE 成長
出浦桃子， 藤井高志， 荒木努 - 日本結晶成長学会誌, 2024 - jstage.jst.go.jp
抄録 ScAlMgO 4 (SAM) has attracted attention as a substrate for fabricating bulk GaN
crystals and InGaN template substrates. Radio-frequency plasma-assisted molecular beam …
crystals and InGaN template substrates. Radio-frequency plasma-assisted molecular beam …
分子線エピタキシ法を用いた窒化物半導体結晶成長の最前線
荒木努， 出浦桃子， 藤井高志， 毛利真一郎 - 応用物理, 2023 - jstage.jst.go.jp
抄録 分子線エピタキシ法 (MBE) は, 有機金属気相成長法, ハイドライド気相成長法と並ぶ窒化物
半導体薄膜結晶成長手法の 1 つとして, 国内外で長きにわたり研究開発が進められている …
半導体薄膜結晶成長手法の 1 つとして, 国内外で長きにわたり研究開発が進められている …
ユビキタスデバイス開発を加速する新しいエレクトロニクス材料2.RF-MBE法によるScAlMgO4基板上窒化物半導体の結晶成長と評価
荒木努， 出浦桃子， 藤井高志 - 材料, 2023 - jstage.jst.go.jp
ユビキタスデバイス開発を加速する新しいエレクトロニクス材料 Toggle navigation J-STAGE
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