Surfaces of semiconducting materials excited by femtosecond laser pulses emit
electromagnetic waves in the terahertz (THz) frequency range, which by definition is the 0.1 …

The objective of this work is to study the delamination of bismuth ferrite prepared by atomic
layer deposition on highly oriented pyrolytic graphite (HOPG) substrate. The samples' …

The experimental THz-excitation spectroscopy technique for determining heterojunction
band offsets is suggested. When photoexcited electrons gain sufficient energy to pass the …

Critical point transition energies and optical functions of the novel GaAs-based dilute
bismide alloys GaAsBi, GaNAsBi, and GaPAsBi were determined using spectroscopic …

Bismide semiconductor materials and heterostructures are considered a promising
candidate for the design and implementation of photonic, thermoelectric, photovoltaic, and …

Semiconductor core–shell nanowires based on the GaAs substrate are the building blocks
of many photonic, photovoltaic and electronic devices, thanks to their associated direct …

Semiconductor nanowires (NWs) synthesis successes have given keys to unprecedented
nano-scale sensitivity opening up new opportunities in device applications. NWs' potential …

Studies on GaAsBi-based devices have been deeply carried out in recent years, strongly
driven by their excellent performance. Despite the growing interest in GaAsBi, the systematic …

Recently, there has been tremendous research interest in novel bismide semiconductor
materials (such as GaBi x As 1− x) for wavelength-engineered, low-loss optoelectronic …

Research and development bismides have proven bismides to be a promising field for
material science with important applications in optoelectronics. However, the development …