Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS
VT Vu, D Celi, T Zimmer, S Fregonese… - 2016 IEEE Bipolar …, 2016 - ieeexplore.ieee.org
This paper presents a novel Fully Self-Aligned (FSA) Si/SiGe HBT architecture using
Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the …
Selective Epitaxial Growth (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from the …
Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM
This study delves deeper into the high-frequency (HF) behavior of state-of-the-art sub-THz
silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55 nm …
silicon-germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55 nm …
Device simulation of high-performance SiGe heterojunction bipolar transistors
J Korn - 2018 - depositonce.tu-berlin.de
Silicon-germanium (SiGe) heterojunction bipolar transistors (HBT) are well suited for high-
frequency applications. Their performance has been improved continuously in recent years …
frequency applications. Their performance has been improved continuously in recent years …
Investigating high-frequency sige hbts: assessment of characterization and new architecture exploration
S Panda - 2022 - theses.hal.science
Silicon germanium heterojunction bipolar transistors (SiGe HBTs) are rapidly evolving due
to current communication systems'(4G, 5G & 6G) increased functionality and speed. Since …
to current communication systems'(4G, 5G & 6G) increased functionality and speed. Since …
Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications
G Sasso, V d'Alessandro, M Costagliola… - Materials Science and …, 2012 - Elsevier
The temperature influence on both DC and RF performance of advanced silicon–germanium
heterojunction bipolar transistors is analyzed in the temperature range from 300 to 380K …
heterojunction bipolar transistors is analyzed in the temperature range from 300 to 380K …