Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …

HfAlO film‐based ferroelectric memory is a strong contender for the next‐generation
nonvolatile memories. However, the remanent polarization intensity of HfAlO films is small …

Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile
memory devices. Several strategies have demonstrated to be of interest to improve its …

Low‐power nonvolatile memories operating down to deep cryogenic temperatures are
important for a large spectrum of applications from high‐performance computing, electronics …

Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …

Further scaling of dynamic random-access memory (DRAM) faces critical challenges
because of the lack of materials with both high dielectric constant and low leakage. In this …

Magnetoelectric multiferroics, either single-phase or composites comprising ferroelectric/
ferromagnetic coupled films, are promising candidates for energy efficient memory …

Ferroelectric properties of HfO 2-based films are reported to be largely influenced by various
factors including stress, grain size and oxygen vacancies. In this study, Hf 0.5 Zr 0.5 O 2 …

Ferroelectricity in doped HfO 2 thin films was reported for the first time 12 years ago,
generating strong interest in the non-volatile memory and logic community. Thanks to their …