Methods and apparatuses for depositing material into high aspect ratio features, features in
a multi-laminate stack, features having positively sloped sidewalls, features having …

Methods for depositing conformal films using a halogen-containing etchant during atomic
layer deposition are provided. Methods involve exposing a substrate to a halogen …

Provided are methods and apparatuses for depositing a nitride film using one or more
plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer …

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic
layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of …

Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over
memory devices including chalcogenide material are provided herein. Methods include …

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic
layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of …

Provided herein are methods of depositing conformal silicon nitride films using atomic layer
deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon …

Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer
deposition are provided. Methods involve depositing at high temperature, using high plasma …

The disclosed technology relates generally to integrated circuit devices, and in particular to
cross-point memory arrays and methods for fabricating the same. In one aspect, a memory …

(52)(57) ABSTRACT A cross-point memory array includes a plurality of variable resistance
memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that …