Vacancy-mediated migration of Al in single-crystal zinc oxide (ZnO) is investigated using
secondary-ion mass spectrometry (SIMS) combined with hybrid density-functional theory …

The effect of millisecond flash lamp annealing (FLA) on aluminum doped ZnO (AZO) films
and their interface with Si have been studied. The AZO films were deposited by magnetron …

In this work, n-ZnO/p-Si heterojunction was investigated using two-dimensional numerical
simulation. The effect of Zinc Oxide thickness, carrier concentration in Zinc Oxide layer …

The renewed interest in oxide semiconductors has resulted in a considerable progress in
the material development and in understanding the nature of intrinsic and impurity related …

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 C on
both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the …

We have studied the photoluminescence and electrical properties of ZnO films grown
epitaxially by atmospheric pressure MOCVD on 4H-SiC substrates. The dominating D° X …

Si doped Zinc oxide (Si-ZnO) thin films were deposited on glass substrates by RF magnetron
co-sputtering Phosphorus doped Si and ZnO. The effect of different n-Si/ZnO wattage ratios …

The diffusion of Ag and Cu in monocrystalline ZnO has been investigated by isochronal
annealing and probed with a Secondary ion mass spectrometer. The diffusion was …

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy
(SCM) are among the few techniques feasible for characterizing electrical properties on the …

Zinc oxide is attractive for photovoltaic applications due to its properties as Transparent
Conductive Oxide (TCO), as well as for rectifying heterojunctions to silicon. The present work …