A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration
J Wan, C Le Royer, A Zaslavsky… - IEEE Electron Device …, 2011 - ieeexplore.ieee.org
We demonstrate experimentally a capacitor-less one-transistor dynamic random access
memory (DRAM) based on fully depleted silicon-on-insulator substrate. In our device, the …
memory (DRAM) based on fully depleted silicon-on-insulator substrate. In our device, the …
Steep Subthreshold Swing n- and p-Channel Operation of Bendable Feedback Field-Effect Transistors with p+–i–n+ Nanowires by Dual-Top-Gate Voltage …
In this study, we present the steep switching characteristics of bendable feedback field-effect
transistors (FBFETs) consisting of p+–i–n+ Si nanowires (NWs) and dual-top-gate structures …
transistors (FBFETs) consisting of p+–i–n+ Si nanowires (NWs) and dual-top-gate structures …
A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection
We experimentally demonstrate a field-effect transistor with a single front gate built on fully-
depleted silicon-on-insulator substrate that possesses extremely steep switching slope (≪ …
depleted silicon-on-insulator substrate that possesses extremely steep switching slope (≪ …
SOI field-effect diode DRAM cell: Design and operation
A dynamic RAM cell based on the field-effect diode (FED) is presented, and its operation is
described and explained with the help of numerical device simulations. This new cell …
described and explained with the help of numerical device simulations. This new cell …
Performance assessment of nanoscale field-effect diodes
N Manavizadeh, F Raissi, EA Soleimani… - … on Electron Devices, 2011 - ieeexplore.ieee.org
We propose a new structure called a side-contacted field-effect diode (FED). The fabrication
of this new structure is simple, and it offers good electrical characteristics. Furthermore, a …
of this new structure is simple, and it offers good electrical characteristics. Furthermore, a …
Memory characteristics of silicon nanowire transistors generated by weak impact ionization
In this study, we demonstrate the static random access memory (SRAM) characteristics
generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ …
generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ …
SOI FED-SRAM cell: Structure and operation
A static memory cell (SRAM) based on the field-effect diode (FED) is presented, and its
operation is explained with the help of numerical device simulations. Although this new cell …
operation is explained with the help of numerical device simulations. Although this new cell …
A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms
Y Solaro, P Fonteneau, CA Legrand… - Solid-State …, 2016 - Elsevier
We propose and demonstrate experimentally a band-modulation device with extremely
sharp switching capability. The Z 3-FET (Zero gate, Zero swing and Zero impact ionization) …
sharp switching capability. The Z 3-FET (Zero gate, Zero swing and Zero impact ionization) …
Sharp-switching band-modulation back-gated devices in advanced FDSOI technology
H El Dirani, P Fonteneau, Y Solaro, CA Legrand… - Solid-State …, 2017 - Elsevier
A band-modulation device with a free top surface, named Z 3-FET (Zero front-gate, Zero
swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted …
swing slope and Zero impact ionization) and fabricated in the most advanced Fully Depleted …