Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

The growing interest in nanoelectronics and photonics, combined with the development of
new germanium-based devices, provide the impetus to develop new doping methods …

This study presents a laser activation process (LAP) for germanium (Ge) to improve the
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …

This paper reports on the usefulness of shell-doped (SD) junctionless (JL) transistor
architecture for operation as capacitorless dynamic random-access memory (1T-DRAM). SD …

Doping methodologies using monolayers offer controlled, ex situ doping of nanowires
(NWs), and 3D device architectures using molecular monolayers as dopant sources with …

This study explored the effects and mechanisms of phosphorus (P), tin (Sn), and yttrium (Y)
co-implantation in germanium (Ge). A series of dopant concentration measurements and …

Present work has used Green's function approach to derive a two-dimensional analytical
model of the double gate (DG) MOSFET at the subthreshold regime of operation that …

Self-assembled molecular monolayer doping may find important applications in doping
FinFET and nanowire transistors due to its nature of being conformal, nondestructive, and …

Optical characterization of PureGaB germanium-on-silicon (Ge-on-Si) photodiodes was
performed for wavelengths between 255 nm and 1550 nm. In PureGaB technology …

Ge-on-Si and Ge-on-insulator (GeOI) are the most promising materials for the next-
generation nanoelectronics that can be fully integrated with silicon technology. To this day …