Low-frequency (100 Hz⩽ f⩽ 1 MHz) dielectric properties of La 0.8 Sr 0.2 Mn O 3∕ Nb-doped
Sr Ti O 3 heterojunctions were investigated in detail at room temperature. Negative …

A lead-free ferroelectric material,(K0. 5Bi0. 5) TiO3 (KBT), was prepared by a sol–gel
process. Thermal analysis and X-ray diffraction showed that perovskite KBT powders with a …

Ferroelectric bismuth vanadate Bi2VO5. 5 (BVO) thin films have been successfully grown on
p-type Si (100) substrate by using chemical solution decomposition (CSD) technique …

The crystal structure of the sol-gel derived pyrochlore Bi 2 Ti 2 O 7 has been refined by a
Rietveld analysis method using both neutron scattering and x-ray diffraction data. The …

Highly (111) oriented Bi 2 Ti 2 O 7 thin films have been grown on Pt∕ Ti∕ SiO 2∕ Si and Al
2 O 3 substrates by metalorganic decomposition method at 550 C⁠. The structural …

Barium and bismuth titanate thin films and well-ordered inverse opal films are produced by
dip coating from sols containing titanium alkoxides with acetic acid, acetylacetone …

Lead-free bismuth-layered perovskite ferroelectric Bi3. 4Gd0. 6Ti3O12 (BGT) thin films have
been successfully deposited on Pt (111)/Ti/SiO2/Si and p-type Si (100) substrates by a sol …

BiFe 0.95 Mn 0.05 O 3 (BFMO) thin films with and without Bi 2 Ti 2 O 7 (BTO) buffer layer
were fabricated on p-type Si (111) substrates by metal organic decomposition. The …

The bismuth-layered ferroelectric Bi3. 4Eu 0.6 Ti3O12 (BET) thin films have been
successfully deposited on Pt/Ti/SiO2/Si (100) and p-type Si (100) substrates by a sol–gel …

Using infrared spectroscopic ellipsometry, the dielectric functions of (111) oriented Bi 2 Ti 2
O 7 thin films with pyrochlore structure prepared on Pt∕ Ti∕ SiO 2∕ Si substrate were …