In this paper, we report on the bias oscillation of GaN-based Gunn diodes realized on an+-
GaN substrate. Different contact materials, ambient gases, and pulsewidths were used and …

A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …

In this work, we report on Monte Carlo simulations to study the capability to generate Gunn
oscillations of diodes based on InP and GaN with around 1 μm active region length. We …

This paper presents an improved negative differential mobility model for GaN and AlGaN to
simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters v …

The performance and operation of GaN Gunn diodes has been investigated for a number of
device structures and at various temperatures using a three-valley Monte Carlo model …

In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to
optimize their oscillation frequency and DC to AC conversion efficiency. We show that …

With contributions from top international experts from both industry and academia, Nano-
Semiconductors: Devices and Technology is a must-read for anyone with a serious interest …

Impact ionization originated by the buffer leakage current, together with high electric fields (>
3 MV/cm) at the anode corner of the isolating trenches, has been identified as the failure …

We study terahertz (THz) generation from anisotropic streaming distribution of a two-
dimensional electron gas (2DEG) in a GaN/AlGaN quantum well using the ensemble Monte …

The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode
devices by the substitution of a fully depleted p-type doping spike for the doping notch used …