The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

This perspective provides an overview of early developments, current status, and remaining
challenges of microLED (lLED) technology, which was first reported in Applied Physics …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

Time-resolved photoluminescence (TRPL) is often used to study the excitonic dynamics of
semiconductor optoelectronics such as the carrier recombination lifetime of III-nitride light …

We study the carrier dynamics for c-plane InGaN/GaN light-emitting diodes (LEDs) with
various emission wavelengths near the green gap using a small-signal electroluminescence …

Multiphysics processes such as recombination dynamics in the active region, carrier
injection and transport, and internal heating may contribute to thermal and efficiency droop …

III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and
linewidth broadening that is severely detrimental to their color purity. By using first-principles …

Abstract Single-phase flat semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire
substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are …

We investigate the microstructures at the interface between the semipolar (103) AlN epilayer
and the m-plane (100) sapphire substrate using electron microscopy techniques. The …

We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with
non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By …