We show direct evidence for the impact of Heusler/semiconductor interfaces atomic structure
on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices …

Abstract Utilizing a Si 0.1 Ge 0.9 layer grown on Ge/Si (111) as a spin-transport channel and
a Co 2 FeAl 0.5 Si 0.5 ferromagnetic epilayer as a spin injector and detector, we …

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically
sharp interfaces with high spin polarisation are required for efficient spin injection. In this …

For high-performance spintronic applications with Co-based Heusler alloys, we explore Si
1− x Ge x (111) grown by liquid phase epitaxy (LPE) with Al–Ge mixed paste, where x is the …

Heusler alloy has been widely utilized in magnetoresistive sensors to enhance the device
performance. In this work, we theoretically investigate the performance of Heusler-alloy …

Atomic resolution scanning transmission electron microscopy reveals the presence of an
antiphase boundary in the half-metallic Co 2 Fe (Al, Si) full Heusler alloy. By employing the …

We present a magnetic and structural properties study of epitaxially grown B2-ordered full
Heusler Co 2 FeSi 0.5 Al 0.5 single crystal films on Ge (111) substrates, as a function of …

ABSTRACT A structural and FMR study is presented for epitaxial thin films of the Heusler
alloy Co2FeAl0. 5Si0. 5 (CFAS) grown on Ge (111) and Si (111) substrates. All films, as …

The ferromagnetic material MnSb can exist in two polymorphs in epitaxial thin‐film form,
namely niccolite n‐MnSb and cubic c‐MnSb. We investigate the behavior of these …

Magnetic and structural depth profiles of Heusler alloy Co2FeAl0.5Si0.5 epitaxial films on Si(1
1 1) - IOPscience This site uses cookies. By continuing to use this site you agree to our use of …