Growth of 2D materials at the wafer scale

X Xu, T Guo, H Kim, MK Hota, RS Alsaadi… - Advanced …, 2022 - Wiley Online Library
Wafer‐scale growth has become a critical bottleneck for scaling up applications of van der
Waal (vdW) layered 2D materials in high‐end electronics and optoelectronics. Most vdW 2D …

[HTML][HTML] Epitaxial graphene on SiC: a review of growth and characterization

GR Yazdi, T Iakimov, R Yakimova - Crystals, 2016 - mdpi.com
This review is devoted to one of the most promising two-dimensional (2D) materials,
graphene. Graphene can be prepared by different methods and the one discussed here is …

[HTML][HTML] Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

[HTML][HTML] Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction

C Zhang, Y Chen, JK Huang, X Wu, LJ Li, W Yao… - Nature …, 2016 - nature.com
Semiconductor heterostructures are fundamental building blocks for many important device
applications. The emergence of two-dimensional semiconductors opens up a new realm for …

Imaging the breaking of electrostatic dams in graphene for ballistic and viscous fluids

ZJ Krebs, WA Behn, S Li, KJ Smith, K Watanabe… - Science, 2023 - science.org
The charge carriers in a material can, under special circumstances, behave as a viscous
fluid. In this work, we investigated such behavior by using scanning tunneling potentiometry …

[HTML][HTML] Emerging SiC applications beyond power electronic devices

F La Via, D Alquier, F Giannazzo, T Kimoto, P Neudeck… - Micromachines, 2023 - mdpi.com
In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

[HTML][HTML] Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi 2 N 4 heterostructures

X He, WZ Li, Z Gao, ZH Zhang, Y He - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
The quality of contact between a metal electrode and a two-dimensional (2D) semiconductor
is simultaneously determined by the Schottky barrier height (SBH), the tunneling probability …

[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices

F Giannazzo, SE Panasci, E Schilirò, A Koos… - Materials Science in …, 2024 - Elsevier
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …

Nanoscale inhomogeneity of the Schottky barrier and resistivity in multilayers

F Giannazzo, G Fisichella, A Piazza, S Agnello… - Physical Review B, 2015 - APS
Conductive atomic force microscopy (CAFM) is employed to investigate the current injection
from a nanometric contact (a Pt coated tip) to the surface of MoS 2 thin films. The analysis of …