Circuit models of power MOSFETs leading the way of GaN HEMT modelling—A review
Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology
for obtaining high-efficient and compact power electronic systems. At the design stage of a …
for obtaining high-efficient and compact power electronic systems. At the design stage of a …
A datasheet-driven nonsegmented empirical spice model of sic mosfet with improved accuracy and convergence capability
T Yang, X Li, S Yin, Y Wang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a datasheet-driven empirical model of silicon carbide (SiC) MOSFET, in
which both the static–and dynamic–characteristics are accurately captured by using …
which both the static–and dynamic–characteristics are accurately captured by using …
A Simplified Method for SiC Mosfet Spice Models Creation
O Zinchenko, D Varghese… - 2024 IEEE Workshop …, 2024 - ieeexplore.ieee.org
With advances in electric vehicle (EV) technology, the use of SiC MOSFETs for power
converters has increased. To facilitate converter design, accurate and robust SPICE models …
converters has increased. To facilitate converter design, accurate and robust SPICE models …
Model parameter calibration method of SiC power MOSFETs behavioural model
Y Wen, Y Yang, Y Gao - IET Power Electronics, 2020 - Wiley Online Library
To accurately estimate the switching characteristics of silicon carbide (SiC) metal–oxide–
semiconductor field effect transistor, simulating with the behavioural model is a common …
semiconductor field effect transistor, simulating with the behavioural model is a common …
A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence
Z Rao, Y Wang - 2023 IEEE 15th International Conference on …, 2023 - ieeexplore.ieee.org
This paper presents a datasheet-driven SPICE model and corresponding automated
extraction process for Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect …
extraction process for Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect …
Modeling of SiC MOSFETs and Parameter Fitting Using a Genetic Algorithm
SB Kongerød - 2020 - ntnuopen.ntnu.no
Denne masteroppgaven demonstrerer bruken av en genetisk algoritme til å optimalisere
parametere i simuleringsmodeller for å nøyaktig representere målte statiske egenskaper til …
parametere i simuleringsmodeller for å nøyaktig representere målte statiske egenskaper til …
Development of SiC MOSFET electrical model and experimental validation: improvement and reduction of parameter number
QC Nguyen, P Tounsi, JP Fradin… - 2019 MIXDES-26th …, 2019 - ieeexplore.ieee.org
In this work, a new approach for electrical modeling of Silicon Carbide (SiC) MOSFET is
presented. The developed model is inspired from the Curtice model which is using a …
presented. The developed model is inspired from the Curtice model which is using a …