GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled -Ga2O3 as a Gate Dielectric Material
A Kaya, H Mao, J Gao, RV Chopdekar… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper,-Ga 2 O 3 thin films were grown on a p-Si substrate using the sol–gel method.
Structural characterization of the films was performed using X-ray diffraction. Electrical …
Structural characterization of the films was performed using X-ray diffraction. Electrical …
[HTML][HTML] Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs
JH Lee, DS Kim, JG Kim, WH Ahn, Y Bae… - Radiation Physics and …, 2021 - Elsevier
The effects of high energy (57 MeV) proton irradiation on the electrical characteristics of
AlGaN/GaN MISHEMTs were investigated. The MISHEMTs were fabricated with two different …
AlGaN/GaN MISHEMTs were investigated. The MISHEMTs were fabricated with two different …
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
In this letter, we report the impact of epitaxial Gd 2 O 3 on the electrical properties of an
AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) …
AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) …
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation
DQ Xiao, G He, JG Lv, PH Wang, M Liu, J Gao… - Journal of Alloys and …, 2017 - Elsevier
In this work, the band gap, interfacial properties and electrical properties of Gd doped ZrO 2
high-k gate dielectric films deposited by solution method have been systematically …
high-k gate dielectric films deposited by solution method have been systematically …
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
HY Lee, TW Chang, CT Lee - Journal of Electronic Materials, 2021 - Springer
In this study, intrinsic Ga 2 O 3 (i-Ga 2 O 3) film was deposited at about 80 K using a vapor
cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and …
cooling condensation system. Its bandgap energy was 5.0 eV. Low oxygen vacancy and …
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
AlGaN/GaN high-electron mobility transistors (HEMTs) and metal-oxide-semiconductor
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd 2 O 3 as
gate dielectric were irradiated with 2-MeV protons up to fluence of 1× 10 15 cm-2. Results …
gate dielectric were irradiated with 2-MeV protons up to fluence of 1× 10 15 cm-2. Results …
A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
In this paper, we present the electrical properties of hexagonal Gd 2 O 3 grown epitaxially on
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …
GaN/Si (111) and AlGaN/GaN/Si (111) virtual substrates. GaN and AlGaN/GaN …