Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

The correlation between molecular packing structure and its room-temperature
phosphorescence (RTP), hence rational promotion of the intensity, remains unclear. We …

Over the years, a considerable amount of attention has been given to the thermodynamics of
photocatalysts, ie to the location of their valence and conduction bands on the energy scale …

Fourier-transformed photoreflectance and photoluminescence have been used to study the
optical transitions in type II quantum wells (QWs) ranging up to almost 5 µm. High signal-to …

The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …

Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector
engineering. In this work, backside illuminated infrared photoluminescence (PL) and …

Photoluminescence (PL) and photoreflectance (PR) spectroscopy were used for the optical
study of arsenic doping of HgCdTe grown by molecular beam epitaxy (MBE). Un-doped and …

Photoluminescence in a double heterostructure based on a ternary InAsSb solid solution
was observed in the mid-infrared range of 2.5–4 μm. A range of compositions of the InAs1 …

Electronic layout, such as distributions of charge carriers and electric field, in PN junction is
determinant for the photovoltaic devices to realize their functionality. Considerable efforts …

Optical properties of modified type II W-shaped quantum wells have been investigated with
the aim to be utilized in interband cascade lasers. The results show that introducing a …