(57) ABSTRACT A single crystal silicon etching method includes providing a single crystal
silicon Substrate having at least one trench therein. The single crystal silicon Substrate is …

BACKGROUND Optoelectronic integrated circuits (ICs) include both elec tronic and optical
elements Within a single chip. Typical elec tronic elements include? eld effect transistors …

(57) ABSTRACT A method of forming at least one undercut structure in a semiconductor
Substrate. The method comprises providing a semiconductor Substrate, forming at least one …

A method for fabricating butt-coupled electro-absorptive modulators is disclosed. A butt-
coupled electro-absorptive modulator with minimal dislocations in the electro-absorptive …

(57) ABSTRACT A multilayer wafer structure containing a silicon layer that contains at least
one waveguide, an insulating layer and a layer that is lattice compatible with Group III-V …

(57) ABSTRACT A single crystal silicon etching method includes providing a single crystal
silicon Substrate having at least one trench therein. The substrate is exposed to a buffered …

BACKGROUND The fabrication of integrated circuit chips has become a Sophisticated
process that can allow complex circuitry to be densely packaged onto a single wafer, also …

US PATENT DOCUMENTS 2003, 0003724 A1 1/2003 Uchiyama et al. 2003/0104649 A1
6/2003 Ozgur et al. 2003/0168342 A1* 9/2003 Chakravorty et al......... 205,122 2004, OO695 …

The portion of the first light beam propagates in a first 4,135,822 A 1, 1979 Ezekiel counter-
propagating direction, and the portion of the second 4,234,357. A 1 1/1980 Scheppele light …

An optoelectronic device and method of making the same. The device comprising: a
substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically …