J Kataoka, SL Tsai, T Hoshii… - Japanese Journal of …, 2021 - iopscience.iop.org
Leakage current analysis on 50 nm thick ferroelectric Al 0.78 Sc 0.22 N films with TiN electrodes has been performed. The electron conduction followed Schottky emission with an …
Ferroelectric (FE) AlScN materials have been experimentally explored for memory and neuromorphic computing device applications. Here a computational study is performed to …
In the last decades PCs, smartphones and wearable and interconnected electronic gadgets are gaining more and more momentum. Due to this large success, the semiconductor market …