Planar common-mode EMI filter design and optimization for high-altitude 100-kW SiC inverter/rectifier system
Silicon-carbide (SiC) devices are receiving popularity for high-power converter systems in
aircraft due to many advantages over silicon counterparts. However, the electromagnetic …
aircraft due to many advantages over silicon counterparts. However, the electromagnetic …
Thermal Consideration and Design for a 200 kW SiC-Based High-Density Three-Phase Inverter in More Electric Aircraft
As advances in semiconductor, dielectric, and magnetic materials enhance the power
density of power conversion systems, the emphasis on efficient cooling solutions becomes …
density of power conversion systems, the emphasis on efficient cooling solutions becomes …
Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET
This article presents quick analytical prediction methods of switching loss, turn-on/off
overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based …
overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based …
Integrated common-mode filter for GaN power module with improved high-frequency EMI performance
While the employment of wide bandgap (WBG) devices in high-frequency and high-voltage
applications brings benefits such as reduced system size and improved efficiency, it …
applications brings benefits such as reduced system size and improved efficiency, it …
gate oxide thin films based on silicon carbide
KO Odesanya, R Ahmad, A Andriyana… - ECS Journal of Solid …, 2022 - iopscience.iop.org
A comprehensive review of the features of silicon carbide (SiC) and various methods of
deposition of gate oxides are presented in this report. The SiC material, which is mostly …
deposition of gate oxides are presented in this report. The SiC material, which is mostly …
High voltage SiC power module optimized for low parasitics and compatible system interface
SiC power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are strong
candidates to replace Si devices in high voltage applications. Their high breakdown voltage …
candidates to replace Si devices in high voltage applications. Their high breakdown voltage …
Analysis and optimization of high-frequency switching oscillation conducted CM current considering parasitic parameters based on a half-bridge power module
Q Yang, L Wang, Z Qi, X Lu, Z Ma… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
SiC mosfet s with antiparallel SiC schottky barrier diodes (SBDs) without reverse recovery
can significantly reduce turn-on switching loss. However, this will exacerbate the oscillation …
can significantly reduce turn-on switching loss. However, this will exacerbate the oscillation …
A fully integrated common-mode choke design embedded with differential-mode capacitances
The emerging flexible multilayer foils (FMLFs)-based winding design has a great potential to
promote the magnetic integration technique in power electronic systems. This article …
promote the magnetic integration technique in power electronic systems. This article …
EMI mitigation with stacking DBC substrate for high voltage power module
The fast switching speed of high voltage silicon carbide (SiC) Metal-Oxide-Semiconductor
Field-Effect Transistors (MOSFETs) can achieve high power density but are accompanied by …
Field-Effect Transistors (MOSFETs) can achieve high power density but are accompanied by …
A multilevel active CM noise power filter for multilevel inverters
Common-mode voltage (CMV) caused by switching operations of power converters can
significantly degrade the system's stability and performance. Since the effects of the CMV …
significantly degrade the system's stability and performance. Since the effects of the CMV …