In this paper, we employed numerical modeling to investigate the influence of crucial
parameters, namely electric field, confinement parabolicity, compositions, and structure …

InGaAs/GaAs multiple quantum well (MQW) is desirable for many optoelectronic devices
with the wavelength around 1.2 µm. However, the high defect density and instability caused …

Solid-state single-photon emitters (SPEs) are attracting significant attention as fundamental
components in quantum computing, communication, and sensing. Low-dimensional …

Controlling the linear growth rate, a critical factor that determines crystal quality, has been a
challenge in solution-grown single crystals due to complex crystallization kinetics influenced …

We investigate growth conditions for strain-compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64
As/InP quantum cascade lasers (QCLs) by solid-source molecular beam epitaxy (SSMBE) …

Multiple quantum wells (MQWs) are commonly employed in InGaAs/AlGaAs semiconductor
materials for devices such as semiconductor lasers and solar cells. However, the Indium …

We report room temperature (RT) continuous-wave (CW) lasing of quantum well (QW) lasers
grown on (001) Si substrates emitting at 980 nm. Two different QW structures, including …

The impact of growth rate on the optical and crystal quality of InGaAs/AlGaAs multi-quantum
wells (MQWs) and InGaAs single layer grown by molecular beam epitaxy (MBE) is studied …

Abstract Growth of GaAs and In x Ga 1− x As nanowires by the group-III assisted molecular
beam epitaxy growth method on (001) GaAs/SiO 2 substrates is studied in dependence on …

This study investigated the molecular beam epitaxy (MBE) growth conditions of strain-
balanced (SB) In 0.669 GaAs/In 0.362 AlAs superlattices (SLs) for SB quantum cascade …