Application of patterned sapphire substrate for III-nitride light-emitting diodes
Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …
[HTML][HTML] Full-color realization of micro-LED displays
Y Wu, J Ma, P Su, L Zhang, B Xia - Nanomaterials, 2020 - mdpi.com
Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual
reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives …
reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives …
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes
X Zhao, B Tang, L Gong, J Bai, J Ping… - Applied Physics Letters, 2021 - pubs.aip.org
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
desirable for future high-resolution displays and lighting products. Here, we demonstrate …
Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
This work examines the effects of polarization-related electric fields on the energy band
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …
Significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes with a peak external quantum efficiency of up to 6%
We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80× …
[HTML][HTML] Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
Ab initio study of electronic and optical behavior of two-dimensional silicon carbide
Two-dimensional graphene-like silicon carbide (2d-SiC) has emerged as an intriguing new
class of layered nanostructure. Using density functional theory, key electronic and optical …
class of layered nanostructure. Using density functional theory, key electronic and optical …
Effects of stacking periodicity on the structural, electronic, optical and thermoelectric properties of GaSb/InSb superlattices
In this paper, we show the effect of monolayers (m and n) on the structural, electronic, optical
and thermoelectric properties of (GaSb) m/(InSb) n (mn: 1-1, 2-2, 3-3 and 3–1) superlattices …
and thermoelectric properties of (GaSb) m/(InSb) n (mn: 1-1, 2-2, 3-3 and 3–1) superlattices …