Mobility–stability trade-off in oxide thin-film transistors
Thin-film transistors based on amorphous oxide semiconductors could be used to create low-
cost backplane technology for large flat-panel displays. However, a trade-off between …
cost backplane technology for large flat-panel displays. However, a trade-off between …
[HTML][HTML] Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
The transparency of oxide semiconductors is a significant feature that enables the
fabrication of fully transparent electronics. Unfortunately, practical transparent electronics …
fabrication of fully transparent electronics. Unfortunately, practical transparent electronics …
Improved performance and operational stability of solution-processed InGaSnO (IGTO) thin film transistors by the formation of Sn–O complexes
H Kim, S Maeng, S Lee, J Kim - ACS Applied Electronic Materials, 2021 - ACS Publications
Solution-processed indium gallium tin oxide (InGaSnO, IGTO) thin film transistors (TFTs) are
investigated as promising low-cost and stable materials for high-performance amorphous …
investigated as promising low-cost and stable materials for high-performance amorphous …
Quantum confinement effect in amorphous In–Ga–Zn–O heterojunction channels for thin-film transistors
D Koretomo, S Hamada, Y Magari, M Furuta - Materials, 2020 - mdpi.com
Electrical and carrier transport properties in In–Ga–Zn–O thin-film transistors (IGZO TFTs)
with a heterojunction channel were investigated. For the heterojunction IGZO channel, a …
with a heterojunction channel were investigated. For the heterojunction IGZO channel, a …
Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening
It is generally thought that deposition of device‐quality oxide semiconductors requires
somewhat high oxygen supply in order to reduce oxygen deficiency and to suppress …
somewhat high oxygen supply in order to reduce oxygen deficiency and to suppress …
Sputtered boron indium oxide thin-film transistors
KA Stewart, V Gouliouk, DA Keszler, JF Wager - Solid-State Electronics, 2017 - Elsevier
Boron indium oxide (BIO) is studied for thin-film transistor (TFT) channel layer applications.
Sputtered BIO thin films exhibit an amorphous phase over a wide range of B 2 O 3/In 2 O 3 …
Sputtered BIO thin films exhibit an amorphous phase over a wide range of B 2 O 3/In 2 O 3 …
[PDF][PDF] 非晶透明导电氧化物薄膜研究进展
张晓锋， 颜悦， 陈牧， 刘宏燕， 郝常山， 张官理 - 航空材料学报, 2018 - researchgate.net
随着有机/聚合物衬底的广泛使用, 非晶透明导电氧化物薄膜由于兼具优异的透明与导电性,
性能稳定, 表面平整光滑, 易于刻蚀和大面积制备, 兼容现有工艺, 无须后续退火处理进而简化 …
性能稳定, 表面平整光滑, 易于刻蚀和大面积制备, 兼容现有工艺, 无须后续退火处理进而简化 …
Electron affinity control of amorphous oxide semiconductors and its applicability to organic electronics
Energy level matching is a key factor for realizing efficient optoelectronics, such as organic
light‐emitting diodes (OLEDs). Transition metal oxides (TMOs) are widely used as hole …
light‐emitting diodes (OLEDs). Transition metal oxides (TMOs) are widely used as hole …
Ultrawide bandgap high near ultraviolet transparency amorphous Sn–Al co-doped ZnO thin films
H Guendouz, A Bouaine, N Brihi - Journal of Non-Crystalline Solids, 2021 - Elsevier
Abstract Transparent amorphous Sn–Al co-doped ZnO thin films (a-SAZO) were prepared by
sol-gel spin-coating technique. Sn was inserted with a constant concentration of 2 at.%, and …
sol-gel spin-coating technique. Sn was inserted with a constant concentration of 2 at.%, and …
The Impact of IGZO Channel Composition on DRAM Transistor Performance
A Kruv, MJ Van Setten, HFW Dekkers… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The main limitations of the current dynamic random access memory (DRAM) technology are
its scalability and power consumption. These constraints can be overcome by using an In …
its scalability and power consumption. These constraints can be overcome by using an In …