A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

This work explored the properties of RF magnetron sputtered Sn-doped Ga 2 O 3 films
grown on sapphire substrates at different oxygen flow ratios from 0.0 to 2.5%. The in situ …

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous
potential for power-switching devices for next-generation high power electronics. The …

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence
and energy of 3× 10 13 cm− 2/60 keV, 5× 10 13 cm− 2/100 keV, and 7× 10 13 cm− 2/200 …

The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …

β-Ga 2 O 3 is a promising ultra-wide bandgap semiconductor whose properties can be
further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission …

An anomalous diode-like turn-on behavior was observed in the drain characteristics of
current aperture vertical β-Ga 2 O 3 transistors. This phenomenon was attributable to an …

Unintentionally-doped (UID) and Sn-doped crystals of (− 201) β-Ga 2 O 3 were high-
temperature annealed in N 2 and O 2 atmospheres. Surface morphology and structure …

Abstract Single crystal (− 201) β-Ga 2 O 3 substrates doped with Si and Sn have been
thermally annealed in N 2 and O 2 atmospheres. Structural and electrical properties …