Following a short history of its development, the latest advances in the physics of InN and
the arguments surrounding the band-gap controversy are critically reviewed. The role of …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

In this work, we report on self-limiting growth of InN thin films at substrate temperatures as
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …

Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used
to measure indium nitride films grown by radio-frequency sputtering. It is shown that the films …

In this work, we have studied the role varying nitrogen plasma compositions play in the low-
temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited …

The role of point defects related to the presence of excess nitrogen is elucidated for InN thin
films grown by different techniques. Elastic recoil detection analysis has shown the presence …

A recently introduced gas-phase method for the synthesis of III–V semiconductor
nanocrystals (NCs), termed nonequilibrium plasma aerotaxy, is extended to the synthesis of …

Indium nitride (InN) thin films were deposited on Si (111) substrate by plasma-assisted
reactive evaporation with a variable radio frequency (RF) power supply. The effects of RF …

We investigated the effects of postnitridation on the structural characteristics and interfacial
reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of …

We report the effect of rf power on the structural, optical and electrical properties of InN films
grown by modified activated reactive evaporation. In this technique, the substrates were kept …