Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films
SA Kukushkin, AV Osipov - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical
methods currently used for SiC films' growth are discussed and their advantages and …
methods currently used for SiC films' growth are discussed and their advantages and …
New approaches and understandings in the growth of cubic silicon carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented.
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
In fact, despite the long research activity on 3C-SiC, no devices with good electrical …
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
SA Kukushkin, AV Osipov, NA Feoktistov - Physics of the Solid State, 2014 - Springer
A review of recent advances in the field of epitaxial growth of SiC films on Si by means of a
new method of epitaxial substitution of film atoms for substrate atoms has been presented …
new method of epitaxial substitution of film atoms for substrate atoms has been presented …
[HTML][HTML] Highly sensitive and robust 3C-SiC/Si pressure sensor with stress amplification structure
SiC based pressure sensors show tremendous promise for harsh environment applications
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
thanks to their excellent mechanical, electrical, thermal, and chemical properties. This paper …
3C-SiC heteroepitaxial growth on silicon: the quest for holy grail
G Ferro - Critical Reviews in Solid State and Materials Sciences, 2015 - Taylor & Francis
For a long time now, 3C-SiC has attracted attention of the semiconductor community due to
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …
First-principles investigation of near-surface divacancies in silicon carbide
The realization of quantum sensors using spin defects in semiconductors requires a
thorough understanding of the physical properties of the defects in the proximity of surfaces …
thorough understanding of the physical properties of the defects in the proximity of surfaces …
Evolution of epitaxial graphene layers on 3C SiC/Si (1 1 1) as a function of annealing temperature in UHV
The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on
bulk SiC for cost reduction and to better integrate the material with Si based electronic …
bulk SiC for cost reduction and to better integrate the material with Si based electronic …
Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
HP Phan, D Viet Dao, P Tanner, L Wang… - Applied Physics …, 2014 - pubs.aip.org
The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC
thin film grown on a (100) Si wafer was characterized. The longitudinal, transverse gauge …
thin film grown on a (100) Si wafer was characterized. The longitudinal, transverse gauge …
Engineering the dissipation of crystalline micromechanical resonators
High-quality micro-and nanomechanical resonators are widely used in sensing,
communications, and timing, and have future applications in quantum technologies and …
communications, and timing, and have future applications in quantum technologies and …
A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers
We introduce a novel approach to the synthesis of high-quality and highly uniform few-layer
graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films. Using …
graphene on silicon wafers, based on solid source growth from epitaxial 3C-SiC films. Using …