From quantum mechanical concepts to practical circuit applications, this book presents a self-
contained and up-to-date account of the physics and technology of nanowire semiconductor …

As conventional Complementary Metal Oxide Semiconductor (CMOS) reaches extreme
limitation to implement the digital circuits with high density and low power dissipation …

In this paper, the impact of nanowire source/drain extension, diameter, and channel length
on nanowire (NW) device performance is investigated. We present a novel approach using …

After having been considered “exotic devices”, multigate 3D transistor such as FinFETs,
trigate FETs or Gate-all-Around nanowire FETs have become an industrial reality. The …

As a promising alternative to the fundamental device structure, the gate-all-around silicon
nanowire transistor (GAA SNWT) has been studied extensively for decades. In this chapter …

The multigate nanowire FET architecture allows for ultimate short-channel control and push
Moore's law down to sub-5nm gate lengths. This paper reviews nanowire transistor device …

In 1925, Lilienfeld patented the basic principle of field effect transistor (FET). Thirty-four
years later, Kahng and Atalla invented the MOSFET. Since that time, it has become the most …

Die kontinuierliche Skalierung der planaren MOSFETs war in den vergangenen 40 Jahren
der Schlüssel, um die Bauelemente immer kleiner und leistungsfähiger zu gestalten. Hinzu …

In this paper, the insight to the impact of channel and spacer design on DC and RF
performance of GAAFET is carried out. The channel design includes the optimization of …