MicroLED technologies and applications: characteristics, fabrication, progress, and challenges
Z Chen, S Yan, C Danesh - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Micro light-emitting diode (microLED) technology is expected to be used in next-generation
displays and other applications due to its many advantages. This paper categorizes …
displays and other applications due to its many advantages. This paper categorizes …
Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …
Reliability of commercial UVC LEDs: 2022 state-of-the-art
With this study, we report on the reliability of the most recent commercial UVC LED devices.
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
The impact of different AlN/sapphire template technologies [ie, planar, epitaxial lateral
overgrown (ELO), and high temperature annealed sputtered ELO] is studied with respect to …
overgrown (ELO), and high temperature annealed sputtered ELO] is studied with respect to …
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
The impact of operation current on the degradation behavior of 310 nm UV LEDs is
investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current …
investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current …
Degradation effects of the active region in UV-C light-emitting diodes
An extensive analysis of the degradation characteristics of AlGaN-based ultraviolet light-
emitting diodes emitting around 265 nm is presented. The optical power of LEDs stressed at …
emitting diodes emitting around 265 nm is presented. The optical power of LEDs stressed at …
Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
The gain characteristics of high Al-content AlGaN-delta-GaN quantum wells (QWs) are
investigated for mid-and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer …
investigated for mid-and deep-ultraviolet (UV) lasers. The insertion of an ultrathin GaN layer …