Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistors

SY Cheng, WL Chang, HJ Pan, YH Shie, WC Liu - Solid-State Electronics, 1999 - Elsevier
In this paper, the different designs of emitter-base junction including the employment of the δ-
doping sheet and setback layer are presented and studied. A theoretical model is used to …

Valence band structure of very narrow InGaAs/InP quantum wells

F Dujardin, N Marréaud, JP Laurenti - Solid state communications, 1996 - Elsevier
We performed valence band structure calculations on very narrow lattice-matched
GaInAs/InP quantum wells using the 6× 6 Luttinger-Kohn Hamiltonian which includes the …

[PDF][PDF] Electronic states and optical properties of quantum well heterostructures with strain and electric field effects

DM Ryan - 1997 - etheses.dur.ac.uk
The aim of this work was to develop an envelope function method to calculate the electronic
states and optical properties of complex quantum well heterostructures, and to demonstrate …