On a scalable silicon technology platform, we demonstrate photodetectors matching or even
surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics …

We describe and characterize a multi-micron silicon photonics platform that was designed to
combine performance, power efficiency, manufacturability, and versatility for integrated …

A light-trapping-structure vertical Ge photodetector (PD) is demonstrated. In the scheme, a 3
μm radius Ge mesa is fabricated to constrain the optical signal in the circular absorption …

We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide
photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band () …

A general, computationally efficient, physics-based model for the continuous time-domain
description of transient loss in silicon (Si) photonic waveguides due to impinging ionizing …

We present results of an alternative method for the fabrication of germanium fin photodiodes
to facilitate their integration into PIC and ePIC platforms. Therefore, process complexity as …

This work presents a 3D multiphysics model to investigate a lateral Ge-on-Si waveguide
photodetector. The simulation is performed using commercial tools: Synopsys TCAD …

We designed and characterized a photodiode with a multimode-interference waveguiding
structure. The photodiode with two light input ports showed high sensitivity, small junction …