A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature …
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
Combination of sputter deposition and high-temperature annealing is a promising technique
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency
There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …
Low dislocation density AlN on sapphire prepared by double sputtering and annealing
AlN on sapphire with dislocation density of 10 7 cm− 2 was prepared by double sputtering
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
and annealing processes. Full width at half maximum values of X-ray rocking curve for $\left …
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification
B Tang, H Hu, H Wan, J Zhao, L Gong, Y Lei… - Applied Surface …, 2020 - Elsevier
We demonstrate the achieving of high-quality AlN films on flat sapphire substrate (FSS) by
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …
introducing voids during growth. Voids are embedded into AlN epilayers through a growth …
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach
We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The
theoretical approach used in these studies is based on ab initio calculations and includes …
theoretical approach used in these studies is based on ab initio calculations and includes …
Status and prospects of AlN templates on sapphire for ultraviolet light‐emitting diodes
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the …
Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD
In this work, based on physical vapor deposition and high-temperature annealing (HTA), the
4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal …
4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal …