In this letter, a compact branch-line-based quadrature hybrid coupler using a line
miniaturization technique for a 28-GHz application is presented. Coplanar waveguide-based …

In this letter, a quasi-coaxial through-silicon-via (TSV) is presented for millimeter-wave
integrated circuit (IC) packaging. The quasi-coaxial-via (Q-COV) structure in which one side …

A 4× 4 Butler matrix for millimeter-wave communications is presented in this paper. The
circuit takes advantage of a new 3-D Integrated Passive Devices (IPD) process to achieve a …

A miniaturised multiband inkjet printed Quadrature Hybrid Coupler is proposed in this paper.
The design and flexibility characterization of an inkjet-printed coupler on a flexible 50 μm …

In this report, compact 2-stage PAs (Power Amplifiers) have been designed and fabricated
with GaN HEMT discrete devices and IPDs (Integrated Passive Devices) on SiC substrate …

S31 of the 3-dB coupler has also been presented in this paper. The proposed coupler is
designed on Rogers RO4003C substrate. The simulation results and the analytical study on …

In this paper, integrated passive devices (IPDs) were fabricated on high resistivity silicon
(HRS) substrate with> 10 kohms/sq sheet resistivity. The electrical connection between the …

The performance and reliability of AlGaN/AlN/GaN HEMT on 4 inch semi-insulating SiC
substrate fabricated with baseline GaN HEMT process of Wavice Inc. have been reported …

As an emerging and promising technique, mobile edge computing (MEC) can significantly
speed up the execution of tasks and save device energy by offloading the computation …

GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs
on HPSI SiC Substrate Page 1 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using …