Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …

With the development of high power converters, the safe operation of large IGBT modules
with parallel chips is of increasing importance. In a multichip module, uneven solder layer …

The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system,
but its aging state is difficult to predict in advance due to the complicated failure mechanism …

Discrete power devices are used in a wide range of applications some of which would
benefit from device condition monitoring (CM). This article presents a data-driven method to …

This book focuses on the thermal reliability of power semiconductor device by looking at the
failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime …

The current state-of-the-art development process for electric drivetrain (e-drivetrain)
applications is based on segregated simulation and testing activities. A V-model scheme …

This paper presents a combined method for Junction Temperature Estimation and Condition
Monitoring. It calculates a continuous temperature estimate, combined with tracking of …

The rapid development of renewable energy grid-connected power-generation technology
requires higher reliability of power converter. In the field of renewable energy system …

The rapid development of renewable energy system requires higher reliability of power
converter. In the field of power converter, serious accidents often occur in the system due to …