Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures
InGaN layers were grown on n-GaN/GaN/sapphire template using metal organic chemical
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
vapor deposition system by varying Indium (In) flow rate as 11, 13 and 14 μmol/min. The …
Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films
We report on photoluminescence (PL) properties of GaN, GaN: Yb, InGaN, and InGaN: Yb
thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy …
thin films grown on (0001) sapphire substrates by plasma assisted molecular beam epitaxy …