Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices

AJ Yang, SX Wang, J Xu, XJ Loh, Q Zhu, XR Wang - ACS nano, 2023 - ACS Publications
As the Si-based transistors scale down to atomic dimensions, the basic principle of current
electronics, which heavily relies on the tunable charge degree of freedom, faces increasing …

High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors

J Wang, H Lai, X Huang, J Liu, Y Lu, P Liu, W Xie - Materials, 2022 - mdpi.com
Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential
materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is …