Aluminium nitride integrated photonics: a review
Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide
compact solution for functional devices, and its fabrication process is compatible with the …
compact solution for functional devices, and its fabrication process is compatible with the …
Integrated High-Q Crystalline AlN Microresonators for Broadband Kerr and Raman Frequency Combs
Development of planar-integrated microresonators with high quality factors (Q's) is crucial for
nonlinear photonics in a robust chip. Compared with silicon and silicon nitride, aluminum …
nonlinear photonics in a robust chip. Compared with silicon and silicon nitride, aluminum …
Aluminum nitride-on-sapphire platform for integrated high-Q microresonators
We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated
optics. High-confinement AlN microring resonators are realized by adopting a partially …
optics. High-confinement AlN microring resonators are realized by adopting a partially …
Sub-quarter micrometer periodically poled Al0. 68Sc0. 32N for ultra-wideband photonics and acoustic devices
In this study, we demonstrate the ability of polarity inversion of sputtered aluminum
scandium nitride thin films through post-fabrication processes with domain widths as small …
scandium nitride thin films through post-fabrication processes with domain widths as small …
Aluminum scandium nitride on 8-inch Si wafers: material characterization and photonic device demonstration
The anisotropic optical properties of aluminum scandium nitride (Al_1− xScxN) thin films for
both ordinary and extraordinary light are investigated. A quantitative analysis of the band …
both ordinary and extraordinary light are investigated. A quantitative analysis of the band …
Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique
SE Chiang, WH Chang, YT Chen, WC Li… - …, 2023 - iopscience.iop.org
Second harmonic generation (SHG) intensity, Raman scattering stress, photoluminescence
and reflected interference pattern are used to determine the distributions of threading …
and reflected interference pattern are used to determine the distributions of threading …
High-quality AlN growth: a detailed study on ammonia flow
High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have
been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow …
been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow …
A first-principles study of novel cubic AlN phases
By a first-principles approach combined with an evolutionary method, four novel cubic AlN
phases (cP16, cF40, cI16, and c I24 AlN) are proposed as promising phases after detailed …
phases (cP16, cF40, cI16, and c I24 AlN) are proposed as promising phases after detailed …
Piezoelectric lattice vibrations in binary nitrides at optical frequencies
Piezoelectric nature of wurtzite binary nitrides (AlN, GaN and InN) has been extensively
utilized in different devices and experiments from DC to microwaves frequencies. At optical …
utilized in different devices and experiments from DC to microwaves frequencies. At optical …
Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron
C Macchi, J Bürgi, JG Molleja, S Mariazzi… - The European Physical …, 2014 - epjap.org
It is well-known that the characteristics of aluminum nitride thin films mainly depend on their
morphologies, the quality of the film-substrate interfaces and the open volume defects. A …
morphologies, the quality of the film-substrate interfaces and the open volume defects. A …