Investigation of nitrogen content effect in reducing agent to prepare wavelength controllable fluorescent silicon nanoparticles and its application in detection of 2 …
Y Han, Y Chen, J Feng, M Na, J Liu, Y Ma, S Ma… - Talanta, 2019 - Elsevier
Fluorescent silicon nanoparticles (SiNPs) displayed different emission wavelengths have
been synthesized, but it has not been reported that the preparation of wavelength …
been synthesized, but it has not been reported that the preparation of wavelength …
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
A sheet of spherical, well-separated, crystalline Ge nanodots embedded in SiO 2 on top of a
p-(001) Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid …
p-(001) Si wafer was fabricated by molecular beam epitaxy (MBE) combined with rapid …
Vertical molecular transistors: a new strategy towards practical quantum devices
R Hayakawa, Y Wakayama - Nanotechnology, 2023 - iopscience.iop.org
Considerable effort has been dedicated to improving molecular devices since they were
initially proposed by Aviram and Ratner in 1974. Organic molecules are small and have …
initially proposed by Aviram and Ratner in 1974. Organic molecules are small and have …
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
Si-nanocrystal memory devices aiming at low-voltage non-volatile memory applications are
explored. The devices consist of a single metal-oxide-semiconductor field-effect-transistor …
explored. The devices consist of a single metal-oxide-semiconductor field-effect-transistor …
Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing
CJ Park, KH Cho, WC Yang, HY Cho, SH Choi… - Applied physics …, 2006 - pubs.aip.org
Metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) of 3–4 nm diameter
and 2× 10 12 cm− 2 density are shown to exhibit capacitance-voltage hysteresis of 20.9 V …
and 2× 10 12 cm− 2 density are shown to exhibit capacitance-voltage hysteresis of 20.9 V …
Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
K Das, M NandaGoswami, R Mahapatra, GS Kar… - Applied physics …, 2004 - pubs.aip.org
Metal-oxide-semiconductor capacitors with a trilayer structure consisting of the cap gate
oxide, sputtered SiGe layers and thermally grown tunnel oxide were fabricated on p-Si …
oxide, sputtered SiGe layers and thermally grown tunnel oxide were fabricated on p-Si …
Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications
This study investigates the structural, morphological, and electrical properties of silicon (Si)
and germanium (Ge) quantum dots (QDs) embedded within thin SiO₂ layers in Metal …
and germanium (Ge) quantum dots (QDs) embedded within thin SiO₂ layers in Metal …
[图书][B] Semiconductor nanocrystals and metal nanoparticles: physical properties and device applications
T Chen, Y Liu - 2016 - taylorfrancis.com
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
Memory and negative photoconductivity effects of Ge nanocrystals embedded in gate dielectrics
Q Wan, NL Zhang, WL Liu, CL Lin, TH Wang - Applied physics letters, 2003 - pubs.aip.org
Metal–insulator–semiconductor (MIS) structures containing Ge nanocrystals embedded in
high permittivity dielectrics (ZrO 2/Al 2 O 3) are fabricated by electron-beam evaporation …
high permittivity dielectrics (ZrO 2/Al 2 O 3) are fabricated by electron-beam evaporation …
Single‐Electron Tunneling through Molecular Quantum Dots in a Metal‐Insulator‐Semiconductor Structure
R Hayakawa, N Hiroshiba, T Chikyow… - Advanced Functional …, 2011 - Wiley Online Library
A sigle‐electron tunneling (SET) in a metal‐insulator‐semiconductor (MIS) structure is
demonstrated, in which C60 and copper phthalocyanine (CuPc) molecules are embedded …
demonstrated, in which C60 and copper phthalocyanine (CuPc) molecules are embedded …