III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

In this study, we investigated the relationship of light output power with the optical thickness
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …

AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) still suffer from poor
quantum efficiency and low optical power. In this work, we proposed a DUV LED structure …

AlGaN LEDs emitting< 230 nm UV light were fabricated on sapphire substrates. We
employed a quantum well (QW) with an extremely thin barrier to enhance the quantum …

AlGaN based deep ultraviolet (DUV) light-emitting diodes (LEDs), especially with a
wavelength below 250 nm, have great application potential in the fields of sterilization and …

It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole
injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum …

AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury
(Hg) pollution free, small size, high efficiency, and so on, and are widely used in military …

A 2‐inch wafer‐scale electron‐beam (e‐beam) pumped deep‐ultraviolet surface emitter
(DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is …

In this paper, a new n-type confinement layer that uses the stepped and super-lattice
structure to replace conventional n-type AlGaN layer of deep ultraviolet light-emitting diode …