Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects
The evolution of the contact scheme has driven the technology revolution of crystalline
silicon (c‐Si) solar cells. The state‐of‐the‐art high‐efficiency c‐Si solar cells such as silicon …
silicon (c‐Si) solar cells. The state‐of‐the‐art high‐efficiency c‐Si solar cells such as silicon …
Vertical Schottky contacts to bulk GaN single crystals and current transport mechanisms: A review
H Kim - Journal of Electronic Materials, 2021 - Springer
Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …
semiconductor materials for light-emitting photonic diodes and high-frequency/power …
Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates
Y Ren, Z He, B Dong, C Wang, Z Zeng, Q Li… - Journal of Alloys and …, 2022 - Elsevier
This work focuses on the electrical properties of Ni/n-GaN Schottky barrier diodes (SBDs)
fabricated on GaN bulk substrates with different crystal orientations. For the SBDs on a …
fabricated on GaN bulk substrates with different crystal orientations. For the SBDs on a …
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with
different AlN thicknesses were investigated. According to capacitance–voltage (C–V) …
different AlN thicknesses were investigated. According to capacitance–voltage (C–V) …
Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx
A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic
contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and …
contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and …
Carrier transport mechanisms and photovoltaic performance of Ag/MoOx/Ag/MoOx/n-Si/C60/Al heterojunction solar cell
MM Shehata, MM Makhlouf - Journal of Materials Science: Materials in …, 2024 - Springer
Silicon heterojunction (SHJ) technology marks a notable development in the photovoltaic
sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is …
sector, paving the way for solar cells with very high efficiency. At its core, SHJ technology is …
Barrier inhomogeneity and leakage current transport mechanism in vertical Pt/Gd2O3/GaN Schottky diodes
Abstract Vertical Pt Schottky contacts to bulk GaN single crystal with an ultrathin Gd 2 O 3
interlayer grown by atomic layer deposition were electrically characterized using …
interlayer grown by atomic layer deposition were electrically characterized using …
Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces
M Akazawa, T Hasezaki - physica status solidi (b), 2018 - Wiley Online Library
Fermi level depinning at a metal/semiconductor interface by using an ultrathin insulating
interlayer to block the penetration of the metal wave function into the semiconductor is …
interlayer to block the penetration of the metal wave function into the semiconductor is …
LEDs flexibles exploitant l'épitaxie van der Waals avec les semi-conducteurs nitrures: application aux implants cochléaires optiques
J Duraz - 2024 - theses.hal.science
Le développement de l'optogénétique ouvre un nouveau champ d'application aux sources
lumineuses à base de semiconducteurs. Les LEDs à base de nitrure de gallium peuvent …
lumineuses à base de semiconducteurs. Les LEDs à base de nitrure de gallium peuvent …
Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al 2 O 3
layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the …
layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the …