Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

The aqueous electrolyte can be a deformable and stretchable liquid material for iontronic
resistive memory devices. An aqueous medium makes a device closer to the brain‐like …

In this work, native GaO x is positioned between bulk gallium and degenerately doped p-
type silicon (p+-Si) to form Ga/GaO x/SiO x/p+-Si junctions. These junctions show memristive …

Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …

In this study, we used the one-pot solvothermal method to synthesize the TiO 2 nanospheres
(NSs) and used them for non-volatile memory and neuromorphic computing applications …

Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of
Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is …

Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …

We demonstrate a metal-oxide-semiconductor based nonvolatile memory element structure
with a single isolated gold nanoparticle (Au-NP) acting as the storage site. The Au-NPs are …

Artificial neural networks, as a game-changer to break up the bottleneck of classical von
Neumann architectures, have attracted great interest recently. As a unit of artificial neural …

Cerium oxide-based memristors have been extensively studied because of their
compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is …