Present and future of terahertz communications

HJ Song, T Nagatsuma - IEEE transactions on terahertz science …, 2011 - ieeexplore.ieee.org
Recent changes in how people consume multimedia services are causing an explosive
increase in mobile traffic. With more and more people using wireless networks, the demand …

A 0.28 THz power-generation and beam-steering array in CMOS based on distributed active radiators

K Sengupta, A Hajimiri - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
In this paper, we present a scalable transmitter architecture for power generation and beam-
steering at THz frequencies using a centralized frequency reference, sub-harmonic signal …

A SiGe terahertz heterodyne imaging transmitter with 3.3 mW radiated power and fully-integrated phase-locked loop

R Han, C Jiang, A Mostajeran, M Emadi… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology (f T/f max=
220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators based on …

A 280-GHz Schottky diode detector in 130-nm digital CMOS

R Han, Y Zhang, D Coquillat, H Videlier… - IEEE Journal of Solid …, 2011 - ieeexplore.ieee.org
A 2× 2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna
(255× 250 μm 2) is fabricated in a 130-nm logic CMOS process. The series resistance of …

Broadband balanced frequency doublers with fundamental rejection enhancement using a novel compensated Marchand balun

PH Tsai, YH Lin, JL Kuo, ZM Tsai… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, a novel compensation technique is proposed to improve the imbalance of a
Marchand balun due to the unequal odd-and even-mode phase velocities of the coupled …

A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS

O Momeni, E Afshari - IEEE Journal of Solid-State Circuits, 2011 - ieeexplore.ieee.org
A wideband frequency multiplier that effectively generates and combines the even
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …

Injection-Locked CMOS Frequency Doublers for -Wave and mm-Wave Applications

E Monaco, M Pozzoni, F Svelto… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
On-chip frequency generators for high frequency applications suffer from degradation of key
passive components, variable capacitors in particular. In this framework, frequency …

A high-power broadband passive terahertz frequency doubler in CMOS

R Han, E Afshari - IEEE transactions on microwave theory and …, 2013 - ieeexplore.ieee.org
To realize a high-efficiency terahertz signal source, a varactor-based frequency-doubler
topology is proposed. The structure is based on a compact partially coupled ring that …

Passive circuit technologies for mm-wave wireless systems on silicon

JR Long, Y Zhao, W Wu, M Spirito… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
The performance characteristics of transmission lines, silicon integrated waveguides,
tunable LC resonators and passive combiners/splitters and baluns are described in this …

300-GHz double-balanced up-converter using asymmetric MOS varactors in 65-nm CMOS

Z Chen, W Choi, KO Kenneth - IEEE Journal of Solid-State …, 2022 - ieeexplore.ieee.org
A 270–300-GHz double-balanced up-converter fabricated in 65-nm CMOS is presented. The
up-converter is the first to employ accumulation mode MOS asymmetric varactors (ASVARs) …