The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

Ever since the construction of the first integrated circuits (IC's) in the late fifties, an effort to
increase the speed of the ICs by decreasing the linear dimensions of its components has …

The electron mean free path λ and carrier relaxation time τ of the twenty most conductive
elemental metals are determined by numerical integration over the Fermi surface obtained …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

We report on the thin film resistivity of several platinum-group metals (Ru, Pd, Ir, and Pt).
Platinum-group thin films show comparable or lower resistivities than Cu for film thicknesses …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …

The effect of electron surface scattering on the thickness-dependent electrical resistivity ρ of
thin metal layers is investigated using nonequilibrium Green's function density functional …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …