A review on performance comparison of advanced MOSFET structures below 45 nm technology node
N Mendiratta, SL Tripathi - Journal of Semiconductors, 2020 - iopscience.iop.org
CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
18nm n-channel and p-channel Dopingless asymmetrical Junctionless DG-MOSFET: low power CMOS based digital and memory applications
N Mendiratta, SL Tripathi - Silicon, 2022 - Springer
In this paper, an 18nm dopingless asymmetrical junctionless (AJ) double gate (DG)
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …
MOSFET has been designed for suppressed short channel effects (SCEs) for low power …
Induction of buried oxide layer in substrate FD-SOI MOSFET for improving the digital and analog performance
This paper is about to compare the electrical performance of conventional FD-SOI MOSFET
with the BOX integrated substrate SOI MOSFET. The performance is compared and …
with the BOX integrated substrate SOI MOSFET. The performance is compared and …
Simulation Study of Nanoscale FDSOI MOSFET Characteristics
TA Chowdhury - Soft Nanoscience Letters, 2023 - scirp.org
Silicon on insulator (SOI) technology permits a good solution to the miniaturization as the
MOSFET size scales down. This paper is about to compare the electrical performance of …
MOSFET size scales down. This paper is about to compare the electrical performance of …
Stability and reliability performance of double gate junctionless transistor (DG-JLT) 6T SRAM
This work presents the impact of interface trap charges present at Si/SiO_2 interface on
I_ON/I_OFF ratio of double gate junctionless transistor (DG-JLT). DG-JLT is used to …
I_ON/I_OFF ratio of double gate junctionless transistor (DG-JLT). DG-JLT is used to …
Design of 6T SRAM Cell Using Optimized 20 nm SOI Junctionless Transistor
The semiconductor industry has shifted to the System-On-Chip (SoC) platform. The short
channel effects (SCEs) turns out to be noticeable with the transistor scaling. Consequently …
channel effects (SCEs) turns out to be noticeable with the transistor scaling. Consequently …
Introduction to Fiber Bragg Grating Sensors for Liquid Sensing Applications: Fiber Bragg Grating Sensors for Liquid Sensing
S Srivastava, S Agarwal - Opto-VLSI Devices and Circuits for …, 2024 - taylorfrancis.com
The sensor is the most important element of any system. Sensing any physical quantity gives
us the measurement of that particular quantity or equivalent parameter. There are various …
us the measurement of that particular quantity or equivalent parameter. There are various …
Study and analysis of modified junction-less SOI MOSFET at 18nm gate length
V Saxena, Y Gupta, S Kumar, N Rao… - 2020 6th International …, 2020 - ieeexplore.ieee.org
The Silicon-on-Insulator junction-less transistors (JLTSOI) were commenced as a competent
device for nano-scale applications. The main challenges that can limit the use of junction …
device for nano-scale applications. The main challenges that can limit the use of junction …
A Review of Multi-material, Multi-gate MOSFET Structures
Successful integration of the ICs with MOS technology is very efficient and therefore, in the
semiconductor industry MOS technology is widely used. Aggressive and continuous MOS …
semiconductor industry MOS technology is widely used. Aggressive and continuous MOS …
Analysis of gate engineered asymmetric junctionless double gate MOSFET for varying operating conditions
In this paperan asymmetrical junctionless double-gate MOSFET (AJDG-MOSFET) has been
analyzed using different gate oxide material like SiO 2 and HfO 2 and different gate contact …
analyzed using different gate oxide material like SiO 2 and HfO 2 and different gate contact …