The current study reveals the time dependent laser irradiation induced modifications in
structural and optical properties of the thermally evaporated Ge 20 Ag 10 Te 10 Se 60 thin …

Laser irradiation for tuning the optoelectronic parameters of semiconducting thin films is
widely applicable and has many benefits. The aim of the study is 532 nm laser irradiation of …

In the present paper we have studied the effect of Bi addition on the physical and optical
properties of thermally evaporated Te 17 Se 83− x Bi x thin films. With Bi addition the …

A simple and inexpensive spray pyrolysis method has been employed to synthesis a
reproducible pure and F: CdS thin films onto a pre-heated glass substrate. The x-ray …

Chalcogenide materials are unique for their peculiar linear and nonlinear optical properties
and are suitable for various optoelectronic applications. External inputs alter multiple …

The laser irradiation effect on the optoelectrical properties of Ge 10 Se 90 and Ge 10 Se 85
Cu 5 thin films in the view of Cu-doping effect has been investigated. The illumination effect …

Abstract Ge 10 Se 90− x Te x (x= 10, 20, 30) alloys have been prepared by the conventional
melt quenching technique. Several important physical parameters have been calculated to …

Decreasing the band gap of a material due to metal impurities has been approved through
several studies, and this subject is considered as a major area of interest within the …

Abstract Ge 10 In 10 Se 80 thin films were deposited by thermal evaporation technique. X-
ray diffraction confirmed the amorphous nature of the bulk and thin films. The effect of …

In this work, curcumin is naturally isolated from Curcuma longa rhizomes, and is carefully
purified for the use in optoelectronic devices. Column chromatography technique is used to …