Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …

This article provides an overview of power semiconductor devices (PSDs) for the distributed
energy resource (DER) system. To begin with, an overview of electrically triggered silicon …

Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and
85%(70%) Al in the barrier (channel) were evaluated for RF performance. The dc …

Improvements in radio frequency and power electronics can potentially be realized with
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger
breakdown field compared to GaN, but the reported performance thus far has been limited …

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-
bandgap transistors that are promising candidates for RF and power applications. Long …

The precise patterning of front-side mesas, backside vias, and selective removal of ternary
alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN …

In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …

Polarization-doped field effect transistors (PolFETs) were realized with an unintentionally
doped Al x Ga 1-x N channel layer graded over Al compositions 0.60≤ x≤ 1.0 with a …