Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy

A Klein - Journal of physics: Condensed matter, 2015 - iopscience.iop.org
Energy band alignment plays an important role in thin film solar cells. This article presents
an overview of the energy band alignment in chalcogenide thin film solar cells with a …

Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with …

A Klein - Thin Solid Films, 2012 - Elsevier
The energy band alignment at interfaces of semiconducting oxides is of direct relevance for
the electrical function of electronic devices made with such materials. The most important …

Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method

A Dolgonos, TO Mason, KR Poeppelmeier - Journal of solid state chemistry, 2016 - Elsevier
The direct optical band gap of semiconductors is traditionally measured by extrapolating the
linear region of the square of the absorption curve to the x-axis, and a variation of this …

The Work Function of TiO2

S Kashiwaya, J Morasch, V Streibel, T Toupance… - Surfaces, 2018 - mdpi.com
Polycrystalline anatase thin films,(001)-and (101)-oriented anatase TiO 2 single crystals and
(001)-and (110)-oriented rutile TiO 2 single crystals with various surface treatments were …

Transparent conducting oxides for photovoltaics: Manipulation of fermi level, work function and energy band alignment

A Klein, C Körber, A Wachau, F Säuberlich… - Materials, 2010 - mdpi.com
Doping limits, band gaps, work functions and energy band alignments of undoped and
donor-doped transparent conducting oxides ZnO, In 2 O 3, and SnO 2 as accessed by X-ray …

Band offsets, Schottky barrier heights, and their effects on electronic devices

J Robertson - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

Effects of Gas Adsorption Properties of an Au-Loaded Porous In2O3 Sensor on NO2-Sensing Properties

T Ueda, I Boehme, T Hyodo, Y Shimizu, U Weimar… - Acs …, 2021 - ACS Publications
Gas adsorption properties of semiconductor-type gas sensors using porous (pr-) In2O3
powders loaded with and without 0.5 wt% Au (Au/pr-In2O3 and pr-In2O3 sensors …

Assessing capability of semiconductors to split water using ionization potentials and electron affinities only

V Stevanović, S Lany, DS Ginley, W Tumas… - Physical Chemistry …, 2014 - pubs.rsc.org
We show in this article that the position of semiconductor band edges relative to the water
reduction and oxidation levels can be reliably predicted from the ionization potentials (IP) …

Deep vs shallow nature of oxygen vacancies and consequent -type carrier concentrations in transparent conducting oxides

J Buckeridge, CRA Catlow, MR Farrow, AJ Logsdail… - Physical Review …, 2018 - APS
The source of n-type conductivity in undoped transparent conducting oxides has been a
topic of debate for several decades. The point defect of most interest in this respect is the …

Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory

A Walsh, CRA Catlow - Journal of Materials Chemistry, 2010 - pubs.rsc.org
Indium sesquioxide is a transparent conducting oxide material widely used in photovoltaic
and solid-state lighting devices. We report a study of the surface properties of the …